Measurement and simulation of short circuit current sharing under parallel connection: SiC MOSFETs and SiC Cascode JFETs
نویسندگان
چکیده
Short-Circuit (SC) current sharing in parallel connected SiC MOSFETs and Cascode JFETs have been investigated using experimental measurements finite element models. Device parametric variation between devices contributes to uneven reduced module robustness against SC events. Experimental show that threshold voltage is the most critical parameter MOSFETs, more so than device switching rate initial junction temperature. The temperature coefficient of ON-state saturation resistance higher hence, short-circuit energy lower because limited quickly compared MOSFETs. Also, input silicon MOSFET arrangement ensures better performance regarding VTH mismatch under SC. This less Finite models used explore differences conditions explain why are at suppressing currents
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2021
ISSN: ['0026-2714', '1872-941X']
DOI: https://doi.org/10.1016/j.microrel.2021.114271